SPUTTERED NI-P AS AN OHMIC CONTACT TO N-INP, P-INGAAS AND AS A DIFFUSION BARRIER

被引：38

作者：

APPELBAUM, A

ROBBINS, M

SCHREY, F

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 05期

关键词：

D O I：

10.1109/T-ED.1987.23039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1026 / 1032

页数：7

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