Transport mechanisms in manganite-titanate heterojunctions

被引：40

作者：

Susaki, T. ^{[1
]}

Nakagawa, N.

Hwang, H. Y.

机构：

[1] Univ Tokyo, Dept Adv Mat Sci, Chiba 2778561, Japan

[2] Japan Sci & Technol Agcy, Kawagoe, Saitama 3320012, Japan

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.75.104409

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have found that the current-voltage characteristics of La(0.7)Sr(0.3)MnO(3(-delta))/Nb:SrTiO(3) rectifying junctions are quantitatively well described by (thermally assisted) tunneling with an effectively temperature-independent Schottky barrier under no magnetic field, while those of the oxygen deficient junction remarkably deviate from such a simple behavior as magnetic field is applied. These results indicate the junction magnetoresistance arising from magnetic-field changes of the interface band diagram via the strong electron-spin coupling in manganites.

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