共 13 条
[1]
BACKHOUSE C, 1995, P ULSI PITTSB, V12, P327
[2]
DIRECTIONAL DEPOSITION OF CU INTO SEMICONDUCTOR TRENCH STRUCTURES USING IONIZED MAGNETRON SPUTTERING
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1995, 13 (02)
:203-208
[3]
Quenching of electron temperature and electron density in ionized physical vapor deposition
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1997, 15 (02)
:340-344
[4]
Liner conformality in ionized magnetron sputter metal deposition processes
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1996, 14 (04)
:2603-2608
[5]
SIMULATIONS OF TRENCH-FILLING PROFILES UNDER IONIZED MAGNETRON SPUTTER METAL-DEPOSITION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1995, 13 (02)
:183-191
[7]
KAUFMAN HR, 1984, OPERATION BROAD BEAM, P173
[8]
PLASMA CONFINEMENT BY PERMANENT-MAGNET BOUNDARIES
[J].
PHYSICS LETTERS A,
1976, 57 (02)
:145-147
[9]
NICOLS CA, 1996, J VAC SCI TECHNOL B, V14, P3270
[10]
METAL-ION DEPOSITION FROM IONIZED MAGNETRON SPUTTERING DISCHARGE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1994, 12 (01)
:449-453