Antenna sputtering in an internal inductively coupled plasma for ionized physical vapor deposition

被引:18
作者
Foster, JE [1 ]
Wang, W [1 ]
Wendt, AE [1 ]
Booske, J [1 ]
机构
[1] Univ Wisconsin, Ctr Plasma Aided Mfg, Madison, WI 53706 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期
关键词
D O I
10.1116/1.589857
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ionized physical vapor deposition (IPVD) is an emerging technology for coating high aspect ratio vias and trenches for the microelectronics industry. Ionized physical vapor deposition systems typically utilize an inductive discharge generated by an internal antenna. Because the antenna is immersed in the plasma, the possibility of antenna material sputtering into the discharge is a contamination issue. In this investigation, optical emission spectroscopy is used to acquire spectra from an IPVD system to monitor the presence of antenna metal in the discharge. The observed presence of antenna material in the spectra confirms that antenna sputtering is occurring. Experimental sputter rates as determined from witness plate observations are in reasonable agreement with predictions of a simplified model of antenna sputtering, indicating that the sputtering results from large self-bias voltages on the rf antenna. (C) 1998 American Vacuum Society. [S0734-211X(98)00802-6].
引用
收藏
页码:532 / 535
页数:4
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