Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy

被引：28

作者：

Magtoto, NP ^{[1
]}

Niu, C ^{[1
]}

Ekstrom, BM ^{[1
]}

Addepalli, S ^{[1
]}

Kelber, JA ^{[1
]}

机构：

[1] Univ N Texas, Dept Chem, Denton, TX 76203 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期

关键词：

D O I：

10.1063/1.1313816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dielectric breakdown of 7-Angstrom-thick Al2O3 (111) films grown on Ni3Al(111) under ultrahigh vacuum conditions is induced by increasing the bias voltage on the scanning tunneling microscopy tip under constant current feedback. Breakdown is marked by the precipitous retreat of the tip from the surface, and the formation of an elevated feature in the scanning tunneling microscopy image, typically greater than 5 nm high and similar to 100 nm in diameter. Constant height measurements performed at tip/sample distances of 1 nm or less yield no tip/substrate physical interaction, indicating that such features do not result from mass transport. Consistent with this, current/voltage measurements within the affected regions indicate linear behavior, in contrast to a band gap of 1.5 eV observed at unaffected regions of the oxide surface. A threshold electric field value of 11 +/- 1 MV cm(-1) is required to induce breakdown, in good agreement with extrapolated values from capacitance measurements on thicker oxides. (C) 2000 American Institute of Physics. [S0003- 6951(00)01240-7].

引用

页码：2228 / 2230

页数：3

共 16 条

[1] STM atomic-scale characterization of the γ′-Al2O3 film on Ni3Al(111) [J].