Ferroelectric Control of Spin Polarization

被引：614

作者：

Garcia, V. ^{[1
]}

Bibes, M. ^{[1
]}

Bocher, L. ^{[2
]}

Valencia, S. ^{[3
]}

Kronast, F. ^{[3
]}

Crassous, A.

Moya, X. ^{[4
]}

Enouz-Vedrenne, S. ^{[5
]}

Gloter, A. ^{[2
]}

Imhoff, D. ^{[2
]}

Deranlot, C. ^{[1
]}

Mathur, N. D. ^{[4
]}

Fusil, S. ^{[1
,6
]}

Bouzehouane, K. ^{[1
]}

Barthelemy, A. ^{[1
]}

机构：

[1] CNRS Thales, Unite Mixte Phys, F-91767 Palaiseau, France

[2] Univ Paris 11, CNRS, UMR 8502, Phys Solides Lab, F-91405 Orsay, France

[3] Berliner Elekt Speicherring Gesell Synchrotronstr, Helmholtz Zentrum Berlin, D-12489 Berlin, Germany

[4] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England

[5] Thales Res & Technol, F-91767 Palaiseau, France

[6] Univ Evry Val dEssonne, F-91025 Evry, France

来源：

SCIENCE | 2010年 / 327卷 / 5969期

基金：

英国工程与自然科学研究理事会;

关键词：

ELECTRIC-FIELD CONTROL; TUNNEL-JUNCTIONS; FERROMAGNETISM;

D O I：

10.1126/science.1184028

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A current drawback of spintronics is the large power that is usually required for magnetic writing, in contrast with nanoelectronics, which relies on "zero-current," gate-controlled operations. Efforts have been made to control the spin-relaxation rate, the Curie temperature, or the magnetic anisotropy with a gate voltage, but these effects are usually small and volatile. We used ferroelectric tunnel junctions with ferromagnetic electrodes to demonstrate local, large, and nonvolatile control of carrier spin polarization by electrically switching ferroelectric polarization. Our results represent a giant type of interfacial magnetoelectric coupling and suggest a low-power approach for spin-based information control.

引用

页码：1106 / 1110

页数：5

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