Schottky diode characteristics of electrodeposited Au/n-Si(111) nanocontacts

被引：35

作者：

Hugelmann, M ^{[1
]}

Schindler, W ^{[1
]}

机构：

[1] Univ Karlsruhe, Inst Hochfrequenztech & Quantenelek, D-76128 Karlsruhe, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 16期

关键词：

D O I：

10.1063/1.1808871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Au/n-Si(111) contacts with interface areas in the range of 10(-12) cm(2) have been fabricated at the solid/liquid interface by electrochemical Au nucleation onto n-Si(111):H substrates. The contacts show a Schottky diode behavior with current densities much higher than expected from thermionic emission theory. The applied sophisticated in situ measurement technique allows, in general, in situ studies of electronic properties at any (semi-) conducting nanostructure at solid/liquid interfaces under well-defined conditions. (C) 2004 American Institute of Physics.

引用

页码：3608 / 3610

页数：3

共 21 条

[1] Probing electrical transport, electron interference, and quantum size effects at surfaces with STM/STS [J].

Avouris, P ;

Lyo, IW ;

Hasegawa, Y .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1995, 39 (06) :603-616

[2]

Budevski E., 1996, ELECTROCHEMICAL PHAS

[3] Schottky-barrier formation at nanoscale metal-oxide interfaces [J].

Carroll, DL ;

Wagner, M ;

Ruhle, M ;

Bonnell, DA .

PHYSICAL REVIEW B, 1997, 55 (15) :9792-9799

[4] CONFINEMENT OF ELECTRONS TO QUANTUM CORRALS ON A METAL-SURFACE [J].

CROMMIE, MF ;

LUTZ, CP ;

EIGLER, DM .

SCIENCE, 1993, 262 (5131) :218-220

[5] Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process [J].

Hasegawa, H ;

Sato, T ;

Kaneshiro, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04) :1856-1866

[6] Electrodeposition of nanoscale magnetic structures [J].

Hofmann, D ;

Schindler, W ;

Kirschner, J .

APPLIED PHYSICS LETTERS, 1998, 73 (22) :3279-3281

[7] In situ distance Tunneling Spectroscopy at Au-(111)/0.02 M HClO4 -: From Faradaic regime to quantized conductance channels [J].

Hugelmann, M ;

Schindler, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (03) :E97-E101

[8] Tunnel barrier height oscillations at the solid/liquid interface [J].

Hugelmann, M ;

Schindler, W .

SURFACE SCIENCE, 2003, 541 (1-3) :L643-L648

[9]

KERN W, 1979, RCA REV, P187

[10] Quantum transport in metallic nanowires fabricated by electrochemical deposition/dissolution [J].

Li, CZ ;

Tao, NJ .

APPLIED PHYSICS LETTERS, 1998, 72 (08) :894-896

← 1 2 3 →