High-speed operation of resonant tunnelling flip-flop circuit employing MOBILE (monostable-bistable transition logic element)

被引：8

作者：

Maezawa, K ^{[1
]}

Matsuzaki, H ^{[1
]}

Arai, K ^{[1
]}

Otsuji, T ^{[1
]}

Yamamoto, M ^{[1
]}

机构：

[1] NTT Corp, Syst Elect Labs, Atsugi, Kanagawa 24301, Japan

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 20期

关键词：

resonant tunneling devices; high electron mobility transistors;

D O I：

10.1049/el:19971176

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new flip-flop circuit employing a monostable-bistable transition logic element is proposed which was fabricated with resonant tunnelling diodes/HEMT integration technology on an InP substrate. Error free operations up to 18 Gbit/s were demonstrated at room temperature.

引用

页码：1733 / 1734

页数：2