Preparation of a novel target material for carbon nitride film deposition

被引:12
作者
Lu, TR
Kuo, CT [1 ]
Chen, TM
机构
[1] Natl Chiao Tung Univ, Inst Mat Sci & Engn, Hsinchu 30050, Taiwan
[2] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu 30050, Taiwan
关键词
carbon nitride; UV photo-assisted synthesis;
D O I
10.1016/S0040-6090(97)00418-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To increase the nitrogen content and the degree of crystallinity in carbon nitride films by film deposition techniques (i.e. sputtering, laser ablation etc.), a novel target material composed of carbon nitride has been prepared by UV photo-assisted synthesis. The intention is to replace the traditional graphite target with this material. This synthesis involves photo-chemical reaction of sodium amide and chloroform as carbon and nitrogen sources, respectively, followed by high temperature sintering under flowing nitrogen. Elemental analyses indicate the presence of C, N and H in the target material with a nitrogen to carbon ratio of 0.23. Infrared spectroscopy shows a mixture of sp(3) and sp(2) carbon and sp(2) nitrogen in the sintered powder. Six diffraction peaks attributable to alpha-C3N4 were observed in XRD pattern. Grains of similar to 0.3 pm in diameter in an extended network were also observed in the SEM micrographs. The sintered carbon nitride powder is stable up to 800 degrees C. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:126 / 129
页数:4
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