GaSb photovoltaic cells for applications in TPV generators

被引：116

作者：

Bett, AW

Sulima, OV

机构：

[1] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany

[2] AstroPower Inc, Newark, DE 19716 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 05期

关键词：

D O I：

10.1088/0268-1242/18/5/307

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaSb thermophotovoltaic (TPV) cells are one of the reasons for the renewed interest in TPV technology. Today, they are the most suitable choice for modem TPV generators. This paper reviews the background and the status of the GaSb photovoltaic cell development. GaSb TPV cells are fabricated either by a zinc vapour diffusion technology or by epitaxial methods such as liquid phase epitaxy or metal-organic vapour phase epitaxy. Efficiencies of more than 30% under filtered blackbody spectra were reported.

引用

页码：S184 / S190

页数：7

共 40 条

[1] Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE [J].

Agert, C ;

Gladkov, PS ;

Bett, AW .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (01) :39-46

[2]

AGERT C, 2001, P 17 EUR PHOT SOL EN, P372

[3]

AGERT C, 2001, THESIS PHILIPPS U MA

[4]

ANDREEV VM, 1997, P 14 EUR PHOT SOL EN, P1763

[5]

ANDREEV VM, 1996, P 25 IEEE PVSC WASH, P143

[6]

AVERY JE, 1990, P 21 IEEE PVSC, P1277

[7]

Bett A. W., 1996, P 25 IEEE PHOT SPEC, P133

[8]

Bett AW, 1999, AIP CONF PROC, V460, P237, DOI 10.1063/1.57803

[9] Study of Zn diffusion into GaSb from the vapour and liquid phase [J].

Bett, AW ;

Keser, S ;

Sulima, OV .

JOURNAL OF CRYSTAL GROWTH, 1997, 181 (1-2) :9-16

[10]

Bett AW, 1997, AIP CONF PROC, P41

← 1 2 3 4 →