Roughening of the Si/SiO2 interface during SC1-chemical treatment studied by scanning tunneling microscopy

被引：11

作者：

Gotoh, M ^{[1
]}

Sudoh, K ^{[1
]}

Iwasaki, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 04期

关键词：

D O I：

10.1116/1.1303856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Si/SiO2 interface morphology is observed with subnanometer resolution by an ultrahigh vacuum scanning tunneling microscope (STM). We analyze the roughness of the Si/SiO2 interface for a chemical oxide film formed by a wet chemical process (NH4OH/H2O2/H2O treatment). The oxide film is selectively removed by irradiating a field emission electron beam extracted from a STM tip at a temperature of 300-350 degrees C. We find that during the chemical process the roughness of the Si/SiO2 interface increases with the treatment time. (C) 2000 American Vacuum Society. [S0734-211X(00)02604-4].

引用

页码：2165 / 2168

页数：4

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