Fabrication and characterization of a biologically sensitive field-effect transistor using a nanocrystalline diamond thin film

被引：86

作者：

Yang, WS ^{[1
]}

Hamers, RJ ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Chem, Madison, WI 53706 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 16期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1808885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and characterization of a biologically sensitive field-effect transistor (Bio-FET) using a nanocrystalline diamond thin film. Biomolecular recognition capability was provided by linking human immunoglobulin G (IgG) to the diamond surface. Electrical measurements reveal behavior characteristic of field-effect transistors. The biomolecular recognition and specificity characteristics were tested using the two antibodies anti IgM and anti-IgG. Electrical measurements show that the Bio-FET device made on an IgG-modified diamond exhibits a response specific to the anti-IgG antibody. Our results demonstrate the ability to fabricate a bio-FET device using a biologically modified diamond thin film. (C) 2004 American Institute of Physics.

引用

页码：3626 / 3628

页数：3

共 25 条

[1] Thirty years of ISFETOLOGY - What happened in the past 30 years and what may happen in the next 30 years [J].