Wideband low noise CMOS transimpedance amplifier for gigaHertz operation

被引：42

作者：

Toumazou, C

Park, SM

机构：

[1] Imp. Coll. Sci., Technol. and Med., Dept. of Elec. and Electron. Eng., London SW7 2BT, Exhibition Road

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 13期

关键词：

CMOS integrated circuits; optical receivers;

D O I：

10.1049/el:19960814

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel low noise CMOS common gate transimpedance amplifier is presented. Simulated performances gives a 1.2 GHz bandwidth, 1.6 k Omega transimpedance gain, and very low input referred current noise, Results are comparable to those of a recent common base BiCMOS transimpedance amplifier.

引用

页码：1194 / 1196

页数：3

共 11 条

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ABIDI, AA .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (01) :64-66

[2]

CADENAS CC, 1994, IEEE 7 MED EL C P, V2, P613

[3]

Casao J. A., 1992, IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No.92CH3162-5), P123, DOI 10.1109/MCS.1992.186015

[4] LOW-NOISE, LOW-DISTORTION CMOS AM WIDE-BAND AMPLIFIERS MATCHING A CAPACITIVE SOURCE [J].