The Role of Transition Metal Oxides in Charge-Generation Layers for Stacked Organic Light-Emitting Diodes

被引：161

作者：

Hamwi, Sami ^{[1
]}

Meyer, Jens ^{[3
]}

Kroeger, Michael ^{[4
]}

Winkler, Thomas ^{[1
]}

Witte, Marco ^{[1
]}

Riedl, Thomas ^{[2
]}

Kahn, Antoine ^{[3
]}

Kowalsky, Wolfgang ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst High Frequency Technol, D-38106 Braunschweig, Germany

[2] Univ Wuppertal, Inst Elect Devices, D-42119 Wuppertal, Germany

[3] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[4] InnovationLab GmbH, D-69115 Heidelberg, Germany

来源：

ADVANCED FUNCTIONAL MATERIALS | 2010年 / 20卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1002/adfm.201000301

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The mechanism of charge generation in transition metal oxide (TMO)-based charge-generation layers (CGL) used in stacked organic light-emitting diodes (OLEDs) is reported upon. An interconnecting unit between two vertically stacked OLEDs, consisting of an abrupt heterointerface between a Cs(2)CO3-doped 4,7-diphenyl-1,10-phenanthroline layer and a WO3 film is investigated. Minimum thicknesses are determined for these layers to allow for simultaneous operation of both sub-OLEDs in the stacked device. Luminance current density voltage measurements, angular dependent spectral emission characteristics, and optical device simulations lead to minimum thicknesses of the n-type doped layer and the TMO layer of 5 and 2.5 nm, respectively. Using data on interface energetic determined by ultraviolet photoelectron and inverse photoemission spectroscopy, it is shown that the actual charge generation occurs between the WO3 layer and its neighboring hole-transport material, 4,4',4"-tris(N-carbazolyl)-triphenyl amine. The role of the adjacent n-type doped electron transport layer is only to facilitate electron injection from the TMO into the adjacent sub-OLED.

引用

页码：1762 / 1766

页数：5

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