Effect of titanium carbide addition on the thermoelectric properties of B4C ceramics

被引：25

作者：

Cai, KF ^{[1
]}

Nan, CW

Paderno, Y

McLachlan, DS

机构：

[1] Wuhan Univ Technol, State Key Lab ADv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

[2] Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

[3] Univ Witwatersrand, Dept Phys, ZA-2050 Wits, Johannesburg, South Africa

[4] Natl Acad Sci Ukraine, Inst Problems Mat Sci, UA-03142 Kiev, Ukraine

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 115卷 / 10期

关键词：

semiconductors; electronic transport;

D O I：

10.1016/S0038-1098(00)00245-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

TiB2/B4C composite ceramics are prepared via hot pressing, in which the TiB2 particles are formed by introducing TiC0.78 and through the reaction between B4C and TiC0.78. The electrical and thermal conductivities and Seebeck coefficient of samples containing 0, 12.5 and 25.4 vol% TiB2 are measured from room temperature up to 1200 K. The results show that the transport properties of the samples vary with the TiB2 content. The transport properties of a 12.5 vol% TiB2/B4C sample are dominated by the B4C matrix as in undoped B4C ceramics, whilst the transport properties of a 25.4 vol% TiB2/B4C sample an dominated by TiB2 particles. The figure of merit of the 25.4 vol% TiB2/B4C sample is higher than that of the undoped B4C ceramic sample between room temperature and about 700 K, which indicates that it is possible to improve the thermoelectric properties by selecting an optimum combination of different materials. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：523 / 526

页数：4

共 16 条

[1]

ASELAGE T, 1991, MAT RES SOC P, V24, P145

[2]

*ASTM, 1969, C373 ASTM 13

[3] THERMOELECTRIC PROPERTIES OF A COMPOSITE MEDIUM [J].

BERGMAN, DJ ;

LEVY, O .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (11) :6821-6833

[4] Effect of porosity on the thermal-electric properties of Al-doped SiC ceramics [J].

Cai, KF ;

Liu, JP ;

Nan, CW ;

Min, XM .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1997, 16 (22) :1876-1878

[5] The effect of silicon addition on thermoelectric properties of a B4C ceramic [J].

Cai, KF ;

Nan, CW ;

Min, XM .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 67 (03) :102-107

[6]

Heikes R. R., 1961, THERMOELECTRICITY SC, P1

[7] EFFECT OF QUANTUM-WELL STRUCTURES ON THE THERMOELECTRIC FIGURE OF MERIT [J].

HICKS, LD ;

DRESSELHAUS, MS .

PHYSICAL REVIEW B, 1993, 47 (19) :12727-12731

[8] ELECTRICAL-RESISTIVITY OF COMPOSITES [J].

MCLACHLAN, DS ;

BLASZKIEWICZ, M ;

NEWNHAM, RE .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (08) :2187-2203

[9] PHYSICS OF INHOMOGENEOUS INORGANIC MATERIALS [J].

NAN, CW .

PROGRESS IN MATERIALS SCIENCE, 1993, 37 (01) :1-116

[10]

SALES BC, 1996, SCIENCE, V272, P135

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