Characterization of acid diffusion for a negative chemically amplified resist using X-ray proximity lithography

被引：2

作者：

Choi, BK ^{[1
]}

Yang, JS ^{[1
]}

Lee, KH ^{[1
]}

Kim, O ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, POSTECH, Adv Lithog Ctr, Dept EE, Pohang 790784, South Korea

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 42卷

关键词：

D O I：

10.1016/S0167-9317(98)00069-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We suggest a new method to characterize the acid diffusion phenomena for negative chemically amplified resist (CAR) using X-ray proximity lithography (XRL) in a straightforward manner. By measuring replicated critical dimensions of narrow isolated lines with various post exposure bake (PEB) times at certain FEB temperatures, we can calculate the diffusivity of CAR. This method is applied to the measurement of the diffusivity for TDUR - N908 CAR.

引用

页码：301 / 304

页数：4

共 4 条

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