Bonding structure and properties of ion enhanced reactive magnetron sputtered silicon carbonitride films

被引：28

作者：

He, XM ^{[1
]}

Taylor, TN ^{[1
]}

Lillard, RS ^{[1
]}

Walter, KC ^{[1
]}

Nastasi, M ^{[1
]}

机构：

[1] Univ Calif Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2000年 / 12卷 / 37期

关键词：

D O I：

10.1088/0953-8984/12/37/101

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Amorphous silicon carbonitride (a-SiCN) films were synthesized by ion enhanced radio-frequency (rf) magnetron sputtering from a Si4C target using a mixture of Ar and N-2 gases. The oxidation resistance of the films was investigated in an oxygen atmosphere over the temperature range of 0-1000 degrees C. X-ray photoelectron spectroscopy showed that the a-SiCN films exhibited a well-defined Si-C-N bonding structure. The composition, density, hardness, and stress were uniquely characterized with respect to the average energy per deposited atom. Under optimum deposition conditions a-SiCN films can be prepared to exhibit high density (>2.6 g cm(-3)), high hardness (>25 GPa), and enhanced oxidization resistance at temperatures up to 800 degrees C.

引用

页码：L591 / L597

页数：7

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