Monte Carlo modeling in the low-energy domain of the secondary electron emission of polymethylmethacrylate for critical-dimension scanning electron microscopy

被引：38

作者：

Dapor, Maurizio ^{[1
,2
]}

Ciappa, Mauro ^{[3
]}

Fichtner, Wolfgang ^{[3
]}

机构：

[1] FBK IRST, Ctr Mat & Microsistemi, Computat & Theoret Phys Res Unit, I-38123 Povo, Trento, Italy

[2] Univ Trento, Dipartimento Ingn Mat & Tecnol Ind, Trento, Italy

[3] Swiss Fed Inst Technol, Integrated Syst Lab, Zurich, Switzerland

来源：

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2010年 / 9卷 / 02期

关键词：

dielectric materials; PMMA; secondary electrons; Monte Carlo simulation; STOPPING POWERS; SCATTERING; SIMULATION; PMMA;

D O I：

10.1117/1.3373517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The main scattering mechanisms governing the transport of electrons in PMMA in an energy domain ranging from the energy of the primary electron beam down to few hundreds of meV are identified. A quantitative Monte Carlo model for the emission of secondary electrons is developed to be applied for critical dimensions extraction from high-resolution scanning electron microscopy (SEM) images. Selected results are presented, which demonstrate the accuracy of the proposed approach. (C) 2010 Society of Photo-Optical Instrumentation Engineers. [DOI: 10.1117/1.3373517]

引用

页数：9

共 25 条

[1] INTERACTION OF LOW-ENERGY ELECTRONS WITH CONDENSED MATTER - STOPPING POWERS AND INELASTIC MEAN FREE PATHS FROM OPTICAL-DATA [J].