Deposition and properties of CdTe nanowires prepared by template replication

被引:18
作者
Enculescu, Ionut [1 ]
Sima, Marian
Enculescu, Monica
Enache, Mihaela
Ion, Lucian
Antohe, Stefan
Neumann, Reinhard
机构
[1] Natl Inst Mat Phys, Bucharest, Romania
[2] Univ Bucharest, Fac Phys, Bucharest, Romania
[3] Gesell Schwerionenforsch mbH, D-6100 Darmstadt, Germany
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 05期
关键词
Electron diffraction - High resolution transmission electron microscopy - Electrochemical deposition - II-VI semiconductors - Wide band gap semiconductors - Energy dispersive X ray analysis - Energy gap - Scanning electron microscopy - Nanowires - Reduction;
D O I
10.1002/pssb.200675109
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We used the template method to prepare CdTe wires with diameters ranging from 80 nm to 1 mu m. As templates we used polycarbonate and polyethilene tereplitalate ion track membranes and as the method of filling the pores of such membranes we employed electrochemical deposition. The conditions (i.e. bath composition and deposition potential) necessary to obtain the stoichiometric composition of the semiconductor were found. Scanning and transmission electron microscopy were employed for morphological characterization of the nano and microwires. Energy dispersive X-ray analysis was employed for determining the Cd/Te ratio. Selected area electron diffraction was employed for structural measurements. Reflection spectroscopy measurements were performed on nanowire arrays for determining the band gap of the deposited nanostructures. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1607 / 1611
页数:5
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