Fabrication and electrical characteristics of single electron tunneling devices based on Si quantum dots prepared by plasma processing

被引：38

作者：

Dutta, A

Kimura, M

Honda, Y

Otobe, M

Itoh, A

Oda, S

机构：

[1] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Meguro Ku, Tokyo 152, Japan

[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 152, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6B期

关键词：

silicon nanocrystal; single electron tunneling device; Coulomb blockade; nanoelectronics; quantum dots;

D O I：

10.1143/JJAP.36.4038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper presents results on the fabrication of single electron tunneling devices using silicon nanocrystals. We prepare silicon nanocrystals of uniform particle size by very-high-frequency plasma processing and deposit them on a poly-silicon electrode structure having a very small inter-electrode separation of 26-70 nm. Current-voltage (I-V) characteristics show Coulomb blockade and Coulomb staircase at 77 K. For very narrow electrode separation, Coulomb staircase appears in I-V characteristics even at room temperature.

引用

页码：4038 / 4041

页数：4

共 14 条

[1]

IFUKU T, 1997, UNPUB JPN J APPL PHY, V36

[2] Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate [J].