Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon

被引：55

作者：

Mouette, J

Seassal, C

Letartre, X

Rojo-Romeo, P

Leclercq, JL

Regreny, P

Viktorovitch, R

Jalaguier, E

Perreau, P

Moriceau, H

机构：

[1] Ecole Cent Lyon, CNRS, UMR 5512, Lab Elect Optoelect & Microsyst, F-69134 Ecully, France

[2] CEA, GRE, LETI, DTS,DRT, F-38054 Grenoble 9, France

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 06期

关键词：

D O I：

10.1049/el:20030371

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graphite-lattice photonic crystal structures in InP-based heterostructures transferred onto silicon, including a multi-quantum well active layer, have been designed and fabricated. 1.5 mum vertical emission laser operation was observed at room temperature, with very low threshold (below 50 muW).

引用

页码：526 / 528

页数：3

共 6 条

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