Epitaxial growth at PZT/Ir interface

被引:13
作者
Okuwada, K [1 ]
Yoshida, K
Saitou, T
Sawabe, A
机构
[1] Toshiba Corp, Proc & Mfg Engn Ctr, Yokohama, Kanagawa 2358522, Japan
[2] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Setagaya Ku, Tokyo 1578572, Japan
关键词
D O I
10.1557/JMR.2000.0383
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Surface oxidation of an iridium film and the possibility of epitaxial growth of PZT spin-coated film on sputtered iridium were investigated. The free surface on the iridium film oxidized over 400 degreesC with random orientation. Nevertheless, both the PZT(111)/Ir(111) and PZT(100)/Ir(100) interfaces were realized using the highly oriented iridium layer. These results suggest that PZT nucleation has priority over iridium surface oxidation.
引用
收藏
页码:2667 / 2671
页数:5
相关论文
共 6 条
[1]   PREPARATION OF PB(ZR,TI)O-3 THIN-FILMS ON IR AND IRO2 ELECTRODES [J].
NAKAMURA, T ;
NAKAO, Y ;
KAMISAWA, A ;
TAKASU, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5207-5210
[2]   HIGH-RESOLUTION ELECTRON-MICROSCOPY ON EPITAXIAL PB(MG1/3NB2/3)O3 FILM PREPARED BY SOL-GEL METHOD [J].
OKUWADA, K ;
NAKAMURA, S ;
IMAI, M ;
KAKUNO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (6A) :L1052-L1055
[3]   PEROVSKITE FORMATION OF PB(MG1/3NB2/3)O3 AND PB(FE1/2NB1/2)O3 FILM BY SOL-GEL METHOD [J].
OKUWADA, K ;
NAKAMURA, S ;
IMAI, M ;
KAKUNO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (06) :1153-1156
[4]  
OKUWADA K, 1991, CERAMIC T, V22, P713
[5]   XPS INVESTIGATION OF SURFACE OXIDATION LAYERS ON A PLATINUM-ELECTRODE IN ALKALINE-SOLUTION [J].
PEUCKERT, M .
ELECTROCHIMICA ACTA, 1984, 29 (10) :1315-1320
[6]   Elucidation of the switching processes in tetragonal PZT by hysteresis loop and impedance analysis [J].
Wouters, DJ ;
Willems, G ;
Lee, EG ;
Maes, HE .
INTEGRATED FERROELECTRICS, 1997, 15 (1-4) :79-87