Electrical properties of semiconductive Nb-doped BaTiO3 thin films prepared by metal-organic chemical-vapor deposition

被引：33

作者：

Nagano, D ^{[1
]}

Funakubo, H ^{[1
]}

Shinozaki, K ^{[1
]}

Mizutani, N ^{[1
]}

机构：

[1] Tokyo Inst Technol, Fac Engn, Dept Inorgan Mat, Meguro Ku, Tokyo 152, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 16期

关键词：

D O I：

10.1063/1.121251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxially grown semiconductive Nb-doped BaTiO3 thin films with low electrical resistivity similar to that of the bulk single crystal were prepared by metal-organic chemical-vapor deposition. Thin films with 1.5-7.5 at. % Nb content showed n-type semiconductor character. The films with 5.7 at. % Nb content showed the lowest resistivity, 2.8X10(-2) Ohm cm. This value is three orders of magnitude lower than those reported for sintered of Nb-doped BaTiO3, and similar to that of Nb-doped BaTiO3 single crystals. (C) 1998 American Institute of Physics.

引用

页码：2017 / 2019

页数：3

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