Low-temperature preparation of lead-based ferroelectric thick films by screen-printing

被引：8

作者：

Futakuchi, T

Nakano, K

Adachi, M

机构：

[1] Toyama Ind Technol Ctr, Toyama 9300866, Japan

[2] Toyama Prefectural Univ, Fac Engn, Dept Elect & Informat, Toyama 9390398, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 9B期

关键词：

PZT; Pb(Mg1/3Nb2/3)O-3; Pb(Zn1/3Nb2/3)O-3; Pb(Mg1/2W1/2)O-3 ferroelectric; piezoelectric; thick film; actuator;

D O I：

10.1143/JJAP.39.5548

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature preparation of ferroelectric Pb [Zr0.2Ti0.3 (Me1/3Nb2/3)(0.3)(Zn1/3Nb2/3)(0.1) (Mg1/2W1/2)(0.1)]O-3 thick films by a screen-printing method on ZrO2 ceramic substrates and Si substrates was examined. The influence of excess PbO as a sintering aid was investigated in comparison with bulk ceramics. The remanent polarization and coercive field of the thick film fired at 850 degreesC on Si substrate were 8.1 muC/cm(2) and 5.7 kV/cm, respectively. The low-temperature process using this ferroelectric thick film is very promising for the development of advanced microactuators.

引用

页码：5548 / 5551

页数：4

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