Equilibrium model of bimodal distributions of epitaxial island growth

被引：62

作者：

Rudd, RE

Briggs, GAD

Sutton, AP

Medeiros-Ribeiro, G

Williams, RS

机构：

[1] Lawrence Livermore Natl Lab, Condensed Matter Phys Div, Livermore, CA 94551 USA

[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[3] Lab Nacl Luz Sincrotron, BR-13084971 Campinas, SP, Brazil

[4] Hewlett Packard Labs, Palo Alto, CA 94304 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.90.146101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a nanostructure diagram for use in designing heteroepitaxial systems of quantum dots. The nanostructure diagram is computed using a new equilibrium statistical physics model and predicts the island size and shape distributions for a range of combinations of growth temperature and amount of deposited material. The model is applied to Ge on Si(001), the archetype for bimodal island growth, and the results compare well with data from atomic force microscopy of Ge/Si islands grown by chemical vapor deposition.

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页数：4

相关论文

共 26 条

[1] CRITICAL CLUSTER-SIZE - ISLAND MORPHOLOGY AND SIZE DISTRIBUTION IN SUBMONOLAYER EPITAXIAL-GROWTH [J].

AMAR, JG ;

FAMILY, F .

PHYSICAL REVIEW LETTERS, 1995, 74 (11) :2066-2069

[2] CHARACTERIZATION OF INP ISLANDS ON INGAP/GAAS(001) - EFFECT OF DEPOSITION TEMPERATURE [J].

BRESSLERHILL, V ;

REAVES, CM ;

VARMA, S ;

DENBAARS, SP ;

WEINBERG, WH .

SURFACE SCIENCE, 1995, 341 (1-2) :29-39

[3] Equilibrium phase diagrams for dislocation free self-assembled quantum dots [J].

Daruka, I ;

Barabasi, AL .

APPLIED PHYSICS LETTERS, 1998, 72 (17) :2102-2104

[4] Strain-induced island scaling during Si1-xGex heteroepitaxy [J].

Dorsch, W ;

Strunk, HP ;

Wawra, H ;

Wagner, G ;

Groenen, J ;

Carles, R .

APPLIED PHYSICS LETTERS, 1998, 72 (02) :179-181

[5] SiGe island shape transitions induced by elastic repulsion [J].

Floro, JA ;

Lucadamo, GA ;

Chason, E ;

Freund, LB ;

Sinclair, M ;

Twesten, RD ;

Hwang, RQ .

PHYSICAL REVIEW LETTERS, 1998, 80 (21) :4717-4720

[6] Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001) [J].

Goldfarb, I ;

Owen, JHG ;

Hayden, PT ;

Bowler, DR ;

Miki, K ;

Briggs, GAD .

SURFACE SCIENCE, 1997, 394 (1-3) :105-118

[7] Nucleation of ''hut'' pits and clusters during gas-source molecular-beam epitaxy of Ge/Si(001) in in situ scanning tunnelng microscopy [J].

Goldfarb, I ;

Hayden, PT ;

Owen, JHG ;

Briggs, GAD .

PHYSICAL REVIEW LETTERS, 1997, 78 (20) :3959-3962

[8]

Hill T. L., 1994, Thermodynamics of Small Systems

[9] Nucleation and growth mechanisms during MBE of III-V compounds [J].

Joyce, BA ;

Vvedensky, DD ;

Bell, GR ;

Belk, JG ;

Itoh, M ;

Jones, TS .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 67 (1-2) :7-16

[10] Evolution of Ge islands on Si(001) during annealing [J].

Kamins, TI ;

Medeiros-Ribeiro, G ;

Ohlberg, DAA ;

Williams, RS .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :1159-1171