At-wavelength interferometry for extreme ultraviolet lithography

被引:30
作者
Tejnil, E [1 ]
Goldberg, KA
Lee, SH
Medecki, H
Batson, PJ
Denham, PE
MacDowell, AA
Bokor, J
Attwood, D
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Ctr Xray Opt, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 06期
关键词
D O I
10.1116/1.589666
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A phase-shifting point diffraction interferometer is being developed for at-wavelength testing of extreme ultraviolet lithographic optical systems. The interferometer was implemented to characterize the aberrations of a 10x Schwarzschild multilayer-coated reflective optical system at nm. Chromatic vignetting effects are observed and they demonstrate the influence of multilayer coatings on the wave front. A subaperture of the optic with a numerical aperture of 0.07 was measured as having a wave front error of 0.090 wave (1.21 nm) root mean square (rms) at a 13.4 nm wavelength. The wave front measurements indicate measurement repeatability of +/-0.008 wave (+/-0.11 nm) rms. Image calculations that include the effects of the measured aberrations are consistent with imaging performed with the 10x Schwarzschild optic on an extreme ultraviolet exposure tool. (C) 1997 American Vacuum Society.
引用
收藏
页码:2455 / 2461
页数:7
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