Engineering superfluidity in electron-hole double layers

被引：56

作者：

Conti, S ^{[1
]}

Vignale, G

MacDonald, AH

机构：

[1] Max Planck Inst Math Sci, D-04103 Leipzig, Germany

[2] Univ Missouri, Dept Phys, Columbia, MO 65211 USA

[3] Indiana Univ, Dept Phys, Bloomington, IN 47405 USA

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.57.R6846

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that band-structure effects are likely to prevent superfluidity in semiconductor electron-hole double-layer systems. We suggest the possibility that superfluidity could be realized by the application of uniaxial pressure perpendicular to the electron and hole layers.

引用

页码：R6846 / R6849

页数：4

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