Steady-state surface stress induced in noble gas sputtering

被引：21

作者：

Dahmen, K ^{[1
]}

Giesen, M ^{[1
]}

Ikonomov, J ^{[1
]}

Starbova, K ^{[1
]}

Ibach, H ^{[1
]}

机构：

[1] Res Ctr Julich, ISG3, Inst Surfaces & Interfaces, D-52425 Julich, Germany

来源：

THIN SOLID FILMS | 2003年 / 428卷 / 1-2期

关键词：

atom solid interaction; sputtering; surface stress; radiation damage; copper; single crystal surfaces;

D O I：

10.1016/S0040-6090(02)01182-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured the surface stress on single crystal Cu(100) surfaces as induced by bombardment of the surface with the noble gas ions Ar, Ne and He at room temperature. Regardless of the ion type and energy, the induced stress is compressive and saturates as a function of sputter time at a value between 2 and 15 N/m. Saturation time and magnitude of the induced stress depend on the ion species and their energy. The time dependence can be accounted for by assuming a steady state thickness of a defective surface layer, which arises from a balance between sputtering and ion implantation. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：6 / 10

页数：5

共 27 条

[1]

[Anonymous], 1985, STOPPING POWER RANGE

[2] Stress relief in reconstruction [J].

Bach, CE ;

Giesen, M ;

Ibach, H ;

Einstein, TL .

PHYSICAL REVIEW LETTERS, 1997, 78 (22) :4225-4228

[3] AN EASILY OPERABLE SCANNING TUNNELING MICROSCOPE [J].

BESOCKE, K .

SURFACE SCIENCE, 1987, 181 (1-2) :145-153

[4] Bending of crystalline plates under the influence of surface stress - a finite element analysis [J].

Dahmen, K ;

Lehwald, S ;

Ibach, H .

SURFACE SCIENCE, 2000, 446 (1-2) :161-173

[5] A finite element analysis of the bending of crystalline plates due to anisotropic surface and film stress applied to magnetoelasticity [J].

Dahmen, K ;

Ibach, H ;

Sander, D .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2001, 231 (01) :74-84

[6] Real time measurement of epilayer strain using a simplified wafer curvature technique [J].

Floro, JA ;

Chason, E ;

Lee, SR .

DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 :491-496

[7] COARSE TIP DISTANCE ADJUSTMENT AND POSITIONER FOR A SCANNING TUNNELING MICROSCOPE [J].

FROHN, J ;

WOLF, JF ;

BESOCKE, K ;

TESKE, M .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (06) :1200-1201

[8] EFFECT OF VISCOUS-FLOW ON ION DAMAGE NEAR SOLID-SURFACES [J].

GHALY, M ;

AVERBACK, RS .

PHYSICAL REVIEW LETTERS, 1994, 72 (03) :364-367

[9] Step and island dynamics at solid/vacuum and solid/liquid interfaces [J].

Giesen, M .

PROGRESS IN SURFACE SCIENCE, 2001, 68 (1-3) :1-153

[10] ADSORBATE-INDUCED SURFACE STRESS AND SURFACE RECONSTRUCTION - OXYGEN, SULFUR AND CARBON ON NI(111) [J].

GROSSMANN, A ;

ERLEY, W ;

IBACH, H .

SURFACE SCIENCE, 1995, 337 (03) :183-189

← 1 2 3 →