High resolution inductively coupled plasma etching of 30 nm lines and spaces in tungsten and silicon

被引:24
作者
Goodyear, AL [1 ]
Mackenzie, S
Olynick, DL
Anderson, EH
机构
[1] Oxford Instruments Plasma Technol, Bristol, Avon, England
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 06期
关键词
D O I
10.1116/1.1326922
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Dry etching of 30 nm features was investigated for x-ray and integrated electronics applications. These typically require etching of either a tungsten absorber layer or a silicon mold. Through the use of an inductively coupled plasma source and accurate control over substrate temperature it was possible to achieve highly anisotropic patterning of tungsten and silicon. Densely patterned features as small as 30 nm and at pitches of 70 nm were etched in tungsten and silicon, to depths of 100 and 200 nm, respectively. (C) 2000 American Vacuum Society. [S0734-211X(00)18406-9].
引用
收藏
页码:3471 / 3475
页数:5
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