Electronic structure of Zn-substituted germanium clathrates

被引：12

作者：

Borshch, N. A. ^{[1
]}

Pereslavtseva, N. S. ^{[1
]}

Kurganskii, S. I. ^{[2
]}

机构：

[1] Voronezh State Univ, Voronezh 394006, Russia

[2] Voronezh State Tech Univ, Voronezh 394026, Russia

来源：

SEMICONDUCTORS | 2009年 / 43卷 / 05期

关键词：

PLANE-WAVE METHOD; THERMOELECTRIC-MATERIALS;

D O I：

10.1134/S1063782609050030

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The result of the calculations of the electronic structure for Ba8Zn (x) Ge46 - x (x = 4, 6, 8) clathrates are presented. Band structures, total and partial electron densities of states in clathrates were obtained. The effect of the number of substituted atoms on the electron energy spectrum was considered. The linearized augmented plane wave method was used in the calculations.

引用

页码：563 / 567

页数：5

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