Deep-level effects in GaAs microelectronics: A review

被引：21

作者：

N. P. Khuchua

L. V. Khvedelidze

M. G. Tigishvili

N. B. Gorev

E. N. Privalov

I. F. Kodzhespirova

机构：

[1] Tbilisi State University, Tbilisi

[2] Institute of Technical Mechanics, Natl. Academy of Sciences of Ukraine, Dnepropetrovsk

来源：

Russian Microelectronics | 2003年 / 32卷 / 5期

关键词：

Adverse Effect; GaAs; Theoretical Model; Research Literature; Considerable Body;

D O I：

10.1023/A:1025528416032

中图分类号：

学科分类号：

摘要：

A considerable body of research literature on deep centers in GaAs is analyzed. It is shown that the issue remains most relevant to GaAs microelectronics. Data are discussed on the nature of deep centers in the bulk-grown and epitaxial forms of GaAs, whether ion-implanted or undoped. Methods for the characterization of deep centers are described. Theoretical models representing the influence of deep centers on the parameters of devices and ICs are considered. Particular coverage is given to backgating. Practical recommendations are reviewed for controlling the adverse effects of deep centers on the performance of GaAs devices and ICs.

引用

页码：257 / 274

页数：17

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