DIMER CHARGE ASYMMETRY DETERMINED BY PHOTOEMISSION FROM EPITAXIAL GE ON SI(100)-(2 X-1) - COMMENT

[1] HIMPSEL FJ, 1990, PHOTOEMISSION ABSORP, P203

[2] SURFACE CORE-LEVEL SHIFTS ON GE(100) - C(4X2) TO 2X1 AND 1X1 PHASE-TRANSITIONS [J]. PHYSICAL REVIEW B, 1992, 45 (12): : 6692 - 6699

[3] DIMER CHARGE ASYMMETRY DETERMINED BY PHOTOEMISSION FROM EPITAXIAL GE ON SI(100)-(2X1) [J]. PHYSICAL REVIEW LETTERS, 1991, 67 (16) : 2187 - 2190

[4] ROWE JE, 1992, PHYS REV LETT, V69, P550, DOI 10.1103/PhysRevLett.69.550

[5] SURFACE CORE-LEVEL SHIFTS FOR CLEAN AND HALOGEN-COVERED GE(100) AND GE(111) [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8052 - 8056

[6] CRYSTAL-FIELD SPLITTING AND CHARGE FLOW IN THE BUCKLED-DIMER RECONSTRUCTION OF SI(100) 2 X-1 [J]. PHYSICAL REVIEW LETTERS, 1991, 67 (01) : 120 - 123

[7] YANG XO, IN PRESS J VAC SCI T

[8] YARMOFF JA, IN PRESS J VAC SCI T

[1] HIMPSEL FJ, 1990, PHOTOEMISSION ABSORP, P203

[2] SURFACE CORE-LEVEL SHIFTS ON GE(100) - C(4X2) TO 2X1 AND 1X1 PHASE-TRANSITIONS [J]. PHYSICAL REVIEW B, 1992, 45 (12): : 6692 - 6699

[3] DIMER CHARGE ASYMMETRY DETERMINED BY PHOTOEMISSION FROM EPITAXIAL GE ON SI(100)-(2X1) [J]. PHYSICAL REVIEW LETTERS, 1991, 67 (16) : 2187 - 2190

[4] ROWE JE, 1992, PHYS REV LETT, V69, P550, DOI 10.1103/PhysRevLett.69.550

[5] SURFACE CORE-LEVEL SHIFTS FOR CLEAN AND HALOGEN-COVERED GE(100) AND GE(111) [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8052 - 8056

[6] CRYSTAL-FIELD SPLITTING AND CHARGE FLOW IN THE BUCKLED-DIMER RECONSTRUCTION OF SI(100) 2 X-1 [J]. PHYSICAL REVIEW LETTERS, 1991, 67 (01) : 120 - 123

[7] YANG XO, IN PRESS J VAC SCI T

[8] YARMOFF JA, IN PRESS J VAC SCI T