SURFACE CORE-LEVEL SHIFTS ON GE(100) - C(4X2) TO 2X1 AND 1X1 PHASE-TRANSITIONS

被引:53
作者
LELAY, G
KANSKI, J
NILSSON, PO
KARLSSON, UO
HRICOVINI, K
机构
[1] UNIV AIX MARSEILLE 1,UNITE FORMAT & RECH SCI MAT,F-13331 MARSEILLE 3,FRANCE
[2] UNIV LUND,MAX LAB,S-22100 LUND,SWEDEN
[3] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN
[4] LAB UTILISAT RAYONNEMENT ELECTROMAGNET,F-91405 ORSAY,FRANCE
来源
PHYSICAL REVIEW B | 1992年 / 45卷 / 12期
关键词
D O I
10.1103/PhysRevB.45.6692
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
By comparing, under identical experimental conditions, high-resolution synchrotron-radiation core-level photoemission spectra taken from both Ge(111) and Ge(100) samples, we establish that the decomposition of the Ge 3d lines from the clean Ge(100) 2 x 1 surface at room temperature requires two surface components shifted by -0.23 and -0.60 eV relative to the bulk one. This deconvolution is fully consistent with the asymmetric-dimer reconstruction model of this surface. We further study the reversible phase transitions that occur on this surface: 2 x 1 <--> c(4 x 2) at low temperature; 2 x 1 <--> 1 x 1 at high temperature. We show from both core-level and valence-band studies that the number of dimer bonds is essentially conserved in these transitions. We also suggest, by comparing a dimer with an Ising spin, that these transitions correspond, respectively, to an antiferromagnetic ordering at low temperatures and to a paramagnetic disordering at high temperatures.
引用
收藏
页码:6692 / 6699
页数:8
相关论文
共 30 条
  • [1] CORE-LEVEL STUDY OF THE PHASE-TRANSITION ON THE GE(111)-C(2X8) SURFACE
    AARTS, J
    HOEVEN, AJ
    LARSEN, PK
    [J]. PHYSICAL REVIEW B, 1988, 38 (06): : 3925 - 3930
  • [2] SURFACE PHASE-TRANSITIONS ON CLEAN GE(111) STUDIED BY SPECTROSCOPIC ELLIPSOMETRY
    ABRAHAM, M
    LELAY, G
    HILA, J
    [J]. PHYSICAL REVIEW B, 1990, 41 (14): : 9828 - 9835
  • [3] VIBRATIONAL AMPLITUDES IN GERMANIUM AND SILICON
    BATTERMAN, BW
    CHIPMAN, DR
    [J]. PHYSICAL REVIEW, 1962, 127 (03): : 690 - &
  • [4] DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY
    BECKER, RS
    SWARTZENTRUBER, BS
    VICKERS, JS
    KLITSNER, T
    [J]. PHYSICAL REVIEW B, 1989, 39 (03): : 1633 - 1647
  • [5] PHONON COUPLING TO CORE SPECTRA IN HOMOPOLAR SEMICONDUCTORS
    CARSON, RD
    SCHNATTERLY, SE
    [J]. PHYSICAL REVIEW B, 1989, 39 (03): : 1659 - 1662
  • [6] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES
    CHADI, DJ
    [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (01) : 43 - 47
  • [7] STRUCTURE OF SN/GE(111) FROM LOW-ENERGY ELECTRON-DIFFRACTION AND PHOTOEMISSION-STUDIES
    DICENZO, SB
    BENNETT, PA
    TRIBULA, D
    THIRY, P
    WERTHEIM, GK
    ROWE, JE
    [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2330 - 2337
  • [8] SURFACE-STRUCTURE AND LONG-RANGE ORDER OF THE GE(111)-C(2X8) RECONSTRUCTION
    FEIDENHANSL, R
    PEDERSEN, JS
    BOHR, J
    NIELSEN, M
    GREY, F
    JOHNSON, RL
    [J]. PHYSICAL REVIEW B, 1988, 38 (14): : 9715 - 9720
  • [9] THE ATOMIC-STRUCTURE OF VICINAL SI(001) AND GE(001)
    GRIFFITH, JE
    KOCHANSKI, GP
    [J]. CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1990, 16 (04) : 255 - 289
  • [10] PHASE-TRANSITIONS ON THE GE(111) AND SI(111) SURFACES FROM CORE-LEVEL STUDIES
    HRICOVINI, K
    LELAY, G
    ABRAHAM, M
    BONNET, JE
    [J]. PHYSICAL REVIEW B, 1990, 41 (02): : 1258 - 1261