PHASE-TRANSITIONS ON THE GE(111) AND SI(111) SURFACES FROM CORE-LEVEL STUDIES

被引：39

作者：

HRICOVINI, K ^{[1
]}

LELAY, G ^{[1
]}

ABRAHAM, M ^{[1
]}

BONNET, JE ^{[1
]}

机构：

[1] LAB UTILISAT RAYONNEMENT ELECTROMAGNET,F-91405 ORSAY,FRANCE

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.41.1258

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Detailed studies of clean Ge(111) and Si(111) surfaces in a large interval of temperatures around the c(2×8)(1×1) and (7×7)(1×1) transition points have been made by means of core-level photoemission spectroscopy. Through the decomposition of the Ge 3d and Si 2p core levels we bring the evidence that with increasing temperature a part of the surface reconstruction of both semiconductors progressively changes to a nonadatom structure. This new atom configuration seems to be the (2×1) reconstruction and it appears far below the transition-point temperature. © 1990 The American Physical Society.

引用

页码：1258 / 1261

页数：4

共 26 条

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