ELECTROMAGNETIC-RADIATION FROM HOT CARRIERS IN FET-DEVICES

被引：13

作者：

HERZOG, M ^{[1
]}

SCHELS, M ^{[1
]}

KOCH, F ^{[1
]}

MOGLESTUE, C ^{[1
]}

ROSENZWEIG, J ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90191-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1065 / 1069

页数：5

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[1] HOT-CARRIER LIGHT-EMISSION FROM SILICON METAL-OXIDE-SEMICONDUCTOR DEVICES
HERZOG, M
KOCH, F
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2620 - 2622
[2] MONTE-CARLO PARTICLE SIMULATION OF THE HOLE-ELECTRON PLASMA FORMED IN A P-N-JUNCTION
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[J]. ELECTRONICS LETTERS, 1986, 22 (07) : 397 - 398
[3] A SELF-CONSISTENT MONTE-CARLO PARTICLE MODEL TO ANALYZE SEMICONDUCTOR MICROCOMPONENTS OF ANY GEOMETRY
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[J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1986, 5 (02) : 326 - 345
[4] HOT-ELECTRON-INDUCED PHOTON AND PHOTOCARRIER GENERATION IN SILICON MOSFETS
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HU, CM
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[5] A STUDY OF PHOTON-EMISSION FROM N-CHANNEL MOSFETS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) : 1501 - 1508
[6] EMISSION MECHANISM AND BIAS-DEPENDENT EMISSION EFFICIENCY OF PHOTONS INDUCED BY DRAIN AVALANCHE IN SI MOSFETS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 405 - 412