EMISSION MECHANISM AND BIAS-DEPENDENT EMISSION EFFICIENCY OF PHOTONS INDUCED BY DRAIN AVALANCHE IN SI MOSFETS

被引：38

作者：

TSUCHIYA, T ^{[1
]}

NAKAJIMA, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LAB, ATSUGI, KANAGAWA 24301, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21956

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：405 / 412

页数：8

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