EMISSION MECHANISM AND BIAS-DEPENDENT EMISSION EFFICIENCY OF PHOTONS INDUCED BY DRAIN AVALANCHE IN SI MOSFETS

被引：38

作者：

TSUCHIYA, T ^{[1
]}

NAKAJIMA, S ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, ATSUGI ELECT COMMUN LAB, ATSUGI, KANAGAWA 24301, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1109/T-ED.1985.21956

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：405 / 412

页数：8

共 18 条

[11] DESIGN LIMITATIONS DUE TO SUBSTRATE CURRENTS AND SECONDARY IMPACT IONIZATION ELECTRONS IN NMOS LSIS [J].

MATSUNAGA, J ;

KOHYAMA, S ;

KONAKA, M ;

IIZUKA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :93-97

[12]

MATSUNAGA J, 1978, APPL PHYS LETT, V15, P335

[13]

SCHEWCHUN J, 1965, SOLID STATE ELECT, V8, P485

[14] SPATIALLY RESOLVED OBSERVATION OF VISIBLE-LIGHT EMISSION FROM SI MOSFETS [J].

TAM, S ;

HSU, FC ;

KO, PK ;

HU, C ;

MULLER, RS .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :386-388

[15] HOT-ELECTRON-INDUCED PHOTON AND PHOTOCARRIER GENERATION IN SILICON MOSFETS [J].

TAM, S ;

HU, CM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1264-1273

[16] HOT-ELECTRON INDUCED EXCESS CARRIERS IN MOSFETS [J].

TAM, S ;

HSU, FC ;

KO, PK ;

HU, C ;

MULLER, RS .

ELECTRON DEVICE LETTERS, 1982, 3 (12) :376-378

[17] THEORY OF OPTICAL RADIATION FROM BREAKDOWN AVALANCHES IN GERMANIUM [J].

WOLFF, PA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) :184-190

[18] APPLICATION OF FLETCHER-POWELL OPTIMIZATION METHOD TO PROCESS DEVICE SIMULATION OF MOSFET CHARACTERISTICS [J].

YOKOYAMA, K ;

YOSHII, A ;

ADACHI, T ;

KASAI, R .

SOLID-STATE ELECTRONICS, 1982, 25 (03) :201-203

← 1 2 →