APPLICATION OF FLETCHER-POWELL OPTIMIZATION METHOD TO PROCESS DEVICE SIMULATION OF MOSFET CHARACTERISTICS

被引：13

作者：

YOKOYAMA, K

YOSHII, A

ADACHI, T

KASAI, R

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(82)90108-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：201 / 203

页数：3

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