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THRESHOLD-SENSITIVITY MINIMIZATION OF SHORT-CHANNEL MOSFETS BY COMPUTER-SIMULATION
被引:24
作者
:
YOKOYAMA, K
论文数:
0
引用数:
0
h-index:
0
YOKOYAMA, K
YOSHII, A
论文数:
0
引用数:
0
h-index:
0
YOSHII, A
HORIGUCHI, S
论文数:
0
引用数:
0
h-index:
0
HORIGUCHI, S
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1980年
/ 27卷
/ 08期
关键词
:
D O I
:
10.1109/T-ED.1980.20064
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1509 / 1514
页数:6
相关论文
共 13 条
[1]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
[J].
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
;
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
;
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
;
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
;
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
;
LEBLANC, AR
论文数:
0
引用数:
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机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
:256
-268
[2]
DSA MOS-TRANSISTOR AND ITS INTEGRATED-CIRCUIT
[J].
HAYASHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN
HAYASHI, Y
;
SEKIGAWA, T
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ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN
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;
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN
TARUI, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1977,
16
:163
-166
[3]
ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS
[J].
LEE, HS
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0
引用数:
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0
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IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
LEE, HS
.
SOLID-STATE ELECTRONICS,
1973,
16
(12)
:1407
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[4]
1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS
[J].
NING, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
NING, TH
;
COOK, PW
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0
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0
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0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
COOK, PW
;
DENNARD, RH
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IBM Thomas J. Watson Research Center, Yorktown Heights
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;
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h-index:
0
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IBM Thomas J. Watson Research Center, Yorktown Heights
OSBURN, CM
;
SCHUSTER, SE
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0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
SCHUSTER, SE
;
YU, HN
论文数:
0
引用数:
0
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0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
YU, HN
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
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14
(02)
:268
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[5]
NISHIUCHI K, 1978, IEDM TECH DIG, P26
[6]
ELECTRICAL CHARACTERISTICS OF A DSA MOS-TRANSISTOR WITH A FINE-STRUCTURE
[J].
OHKURA, I
论文数:
0
引用数:
0
h-index:
0
机构:
LSI Development Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo
OHKURA, I
;
TOMISAWA, O
论文数:
0
引用数:
0
h-index:
0
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LSI Development Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo
TOMISAWA, O
;
OHMORI, M
论文数:
0
引用数:
0
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机构:
LSI Development Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo
OHMORI, M
;
NAKANO, T
论文数:
0
引用数:
0
h-index:
0
机构:
LSI Development Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo
NAKANO, T
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1979,
14
(02)
:352
-357
[7]
THRESHOLD VOLTAGE THEORY FOR A SHORT-CHANNEL MOSFET USING A SURFACE-POTENTIAL DISTRIBUTION MODEL
[J].
OMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, 180, Musashino shi
OMURA, Y
;
OHWADA, K
论文数:
0
引用数:
0
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机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, 180, Musashino shi
OHWADA, K
.
SOLID-STATE ELECTRONICS,
1979,
22
(12)
:1045
-1051
[8]
DEVICE DESIGN CONSIDERATIONS FOR ION-IMPLANTED N-CHANNEL MOSFETS
[J].
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
RIDEOUT, VL
;
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
GAENSSLEN, FH
;
LEBLANC, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
LEBLANC, A
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1975,
19
(01)
:50
-59
[9]
SUN E, 1978, IEDM, P478
[10]
ANALYTICAL MODELS OF THRESHOLD VOLTAGE AND BREAKDOWN VOLTAGE OF SHORT-CHANNEL MOSFETS DERIVED FROM 2-DIMENSIONAL ANALYSIS
[J].
TOYABE, T
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi. Ltd., Kokubunji
TOYABE, T
;
ASAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi. Ltd., Kokubunji
ASAI, S
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1979,
14
(02)
:375
-383
←
1
2
→
共 13 条
[1]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
[J].
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
;
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
;
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
;
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
;
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
;
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
:256
-268
[2]
DSA MOS-TRANSISTOR AND ITS INTEGRATED-CIRCUIT
[J].
HAYASHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN
HAYASHI, Y
;
SEKIGAWA, T
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN
SEKIGAWA, T
;
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN
TARUI, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1977,
16
:163
-166
[3]
ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS
[J].
LEE, HS
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
IBM CORP,SYST PROD DIV,ESSEX JUNCTION,VT 05452
LEE, HS
.
SOLID-STATE ELECTRONICS,
1973,
16
(12)
:1407
-1417
[4]
1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS
[J].
NING, TH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
NING, TH
;
COOK, PW
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
COOK, PW
;
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
DENNARD, RH
;
OSBURN, CM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
OSBURN, CM
;
SCHUSTER, SE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
SCHUSTER, SE
;
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Thomas J. Watson Research Center, Yorktown Heights
YU, HN
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1979,
14
(02)
:268
-275
[5]
NISHIUCHI K, 1978, IEDM TECH DIG, P26
[6]
ELECTRICAL CHARACTERISTICS OF A DSA MOS-TRANSISTOR WITH A FINE-STRUCTURE
[J].
OHKURA, I
论文数:
0
引用数:
0
h-index:
0
机构:
LSI Development Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo
OHKURA, I
;
TOMISAWA, O
论文数:
0
引用数:
0
h-index:
0
机构:
LSI Development Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo
TOMISAWA, O
;
OHMORI, M
论文数:
0
引用数:
0
h-index:
0
机构:
LSI Development Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo
OHMORI, M
;
NAKANO, T
论文数:
0
引用数:
0
h-index:
0
机构:
LSI Development Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo
NAKANO, T
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1979,
14
(02)
:352
-357
[7]
THRESHOLD VOLTAGE THEORY FOR A SHORT-CHANNEL MOSFET USING A SURFACE-POTENTIAL DISTRIBUTION MODEL
[J].
OMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, 180, Musashino shi
OMURA, Y
;
OHWADA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, 180, Musashino shi
OHWADA, K
.
SOLID-STATE ELECTRONICS,
1979,
22
(12)
:1045
-1051
[8]
DEVICE DESIGN CONSIDERATIONS FOR ION-IMPLANTED N-CHANNEL MOSFETS
[J].
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
RIDEOUT, VL
;
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
GAENSSLEN, FH
;
LEBLANC, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
LEBLANC, A
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1975,
19
(01)
:50
-59
[9]
SUN E, 1978, IEDM, P478
[10]
ANALYTICAL MODELS OF THRESHOLD VOLTAGE AND BREAKDOWN VOLTAGE OF SHORT-CHANNEL MOSFETS DERIVED FROM 2-DIMENSIONAL ANALYSIS
[J].
TOYABE, T
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi. Ltd., Kokubunji
TOYABE, T
;
ASAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Central Research Laboratory, Hitachi. Ltd., Kokubunji
ASAI, S
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1979,
14
(02)
:375
-383
←
1
2
→