DEVICE DESIGN CONSIDERATIONS FOR ION-IMPLANTED N-CHANNEL MOSFETS

被引：35

作者：

RIDEOUT, VL ^{[1
]}

GAENSSLEN, FH ^{[1
]}

LEBLANC, A ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,SEMICOND DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1975年 / 19卷 / 01期

关键词：

D O I：

10.1147/rd.191.0050

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：50 / 59

页数：10

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