THRESHOLD VOLTAGE OF NONUNIFORMLY DOPED MOS STRUCTURES

被引：27

作者：

DOUCET, G ^{[1
]}

VANDEWIE.F ^{[1
]}

机构：

[1] UNIV CATHOLIQUE LOUVAIN,INST ELECT,LAB PHYS & ELECTR ETAT SOLIDE,LOUVAIN 1348,BELGIUM

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 03期

关键词：

D O I：

10.1016/0038-1101(73)90016-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：417 / 423

页数：7

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