ASPECTS OF THE THEORY OF IMPACT IONIZATION IN SEMICONDUCTORS .1.

被引：65

作者：

ROBBINS, DJ

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1980年 / 97卷 / 01期

关键词：

D O I：

10.1002/pssb.2220970102

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：9 / 50

页数：42

共 133 条

[11]

Antoncik E, 1957, CZECH J PHYS, V7, P674

[12]

ANTONCIK E, 1966, SEMICONDUCT SEMIMET, V2, P245

[13] IMPACT IONIZATION THRESHOLDS IN SEMICONDUCTORS [J].

BALLINGER, RA ;

MAJOR, KG ;

MALLINSON, JR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (16) :2573-2585

[14] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[15]

BASSANI F, 1975, ELECTRONIC STATES OP

[16] AUGER EFFECT IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29

[17] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J].

BEATTIE, AR ;

SMITH, G .

PHYSICA STATUS SOLIDI, 1967, 19 (02) :577-&

[18] AUGER RECOMBINATION IN GAAS AN GASB [J].

BENZ, G ;

CONRADT, R .

PHYSICAL REVIEW B, 1977, 16 (02) :843-855

[19]

BENZ G, 1974, 12TH P INT C PHYS SE, P1262

[20]

BEREZIN AA, 1969, FIZ TVERD TELA+, V11, P1285

← 1 2 3 4 5 6 7 8 9 10 →