ELECTRONIC-PROPERTIES OF GRAIN-BOUNDARIES IN SEMICONDUCTORS

被引：5

作者：

BRONIATOWSKI, A

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1987年 / 22卷 / 07期

关键词：

D O I：

10.1051/rphysap:01987002207058500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：585 / 590

页数：6

共 8 条

[1]

BATTISTELLA F, 1986, P MRS, V59, P347

[2] TRANSIENT-CAPACITANCE MEASUREMENT OF THE GRAIN-BOUNDARY LEVELS IN SEMICONDUCTORS [J].

BRONIATOWSKI, A ;

BOURGOIN, JC .

PHYSICAL REVIEW LETTERS, 1982, 48 (06) :424-427

[3]

Broniatowski A., 1985, Polycrystalline Semiconductors: Physical Properties and Applications. Proceedings of the International School of Materials Science and Technology, P95

[4] GRAIN-BOUNDARIES IN SEMICONDUCTORS [J].

GROVENOR, CRM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (21) :4079-4119

[5] CHEMICAL AND ELECTRICAL CHARACTERIZATION OF POLYCRYSTALLINE SEMICONDUCTORS [J].

KAZMERSKI, LL ;

RUSSELL, PE .

JOURNAL DE PHYSIQUE, 1982, 43 (NC1) :171-185

[6] INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES [J].

KIMERLING, LC .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1839-1845

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[8] TRANSIENT RESPONSE OF GRAIN BOUNDARIES AND ITS APPLICATION FOR A NOVEL LIGHT SENSOR [J].

MUELLER, RK .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) :1004-1010

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