TEMPERATURE-DEPENDENT SPUTTERING OF DOPED GRAPHITES AND BORON-CARBIDE

被引：36

作者：

GARCIAROSALES, C ^{[1
]}

GAUTHIER, E ^{[1
]}

ROTH, J ^{[1
]}

SCHWORER, R ^{[1
]}

ECKSTEIN, W ^{[1
]}

机构：

[1] CEN CADARACHE,DRFC,F-13108 ST PAUL DURANCE,FRANCE

来源：

JOURNAL OF NUCLEAR MATERIALS | 1992年 / 189卷 / 01期

关键词：

D O I：

10.1016/0022-3115(92)90413-F

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependence of the sputtering behaviour of various low-Z materials is presented. The hydrocarbon production under deuterium bombardment is investigated as a function of the target temperature. Carbon doped with beryllium or boron, as well as boron carbide show a strong reduction in the chemical sputtering yield. The reduction of the radiation-enhanced sublimation yield (RES) above 1200 K is small and not uniquely correlated with the dopant concentration. A variety of doped graphites is compared for 1 keV D+ sputtering at 300, 800 and 1470 K. The resulting erosion yields are discussed in terms of dopant concentration and the microstructure of the materials.

引用

页码：1 / 8

页数：8

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