EPITAXIAL YBA2CU3O7-DELTA ON GAAS(001) USING BUFFER LAYERS

被引：63

作者：

FORK, DK ^{[1
]}

NASHIMOTO, K ^{[1
]}

GEBALLE, TH ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 13期

关键词：

D O I：

10.1063/1.107219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxy of YBa2Cu3O7-delta (YBCO) on GaAs substrates has been demonstrated using epitaxial buffer layers. Recently developed methods for growing epitaxial YBCO thin films on Si have been adapted to achieve similar results on GaAs. MgO thin films were grown epitaxially on GaAs at below 400-degrees-C. This layer provides a suitable template for the growth of YBCO or YBCO on BaTiO3. All materials are deposited in situ by pulsed laser deposition in a single growth process. The in-plane crystallography of MgO on GaAs is [100] parallel to [100], accomodating a lattice mismatch of -25.5%. Zero resistance at temperatures as high as 87 K and transition widths as narrow as 1.5 K are reported. Critical current densities as high as 9 x 10(6) A/cm2 at 4.2 K and 1.5 x 10(5) A/cm2 at 77 K have been measured.

引用

收藏

页码：1621 / 1623

页数：3

相关论文

共 21 条

[1] INSITU YBA2CU3O7-X SUPERCONDUCTOR FILMS ON GAAS/ALAS SUPERLATTICES [J].

CHANG, LD ;

TSENG, MZ ;

SAMOSKA, LA ;

OSHEA, JJ ;

LI, YJ ;

CAINE, EJ ;

HU, EL ;

PETROFF, PM ;

KROEMER, H .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) :5108-5110

[2]

CHANG LD, IN PRESS APPL PHYS L

[3] EPITAXIAL MGO ON SI(001) FOR Y-BA-CU-O THIN-FILM GROWTH BY PULSED LASER DEPOSITION [J].

FORK, DK ;

PONCE, FA ;

TRAMONTANA, JC ;

GEBALLE, TH .

APPLIED PHYSICS LETTERS, 1991, 58 (20) :2294-2296

[4] HIGH CRITICAL CURRENTS IN STRAINED EPITAXIAL YBA2CU3O7-DELTA ON SI [J].

FORK, DK ;

FENNER, DB ;

BARTON, RW ;

PHILLIPS, JM ;

CONNELL, GAN ;

BOYCE, JB ;

GEBALLE, TH .

APPLIED PHYSICS LETTERS, 1990, 57 (11) :1161-1163

[5] ROLE OF BUFFER LAYERS FOR SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS ON GAAS SUBSTRATES [J].

JIA, QX ;

LEE, SY ;

ANDERSON, WA ;

SHAW, DT .

APPLIED PHYSICS LETTERS, 1991, 59 (09) :1120-1122

[6] OXYGEN ORDERING AND THE ORTHORHOMBIC-TO-TETRAGONAL PHASE-TRANSITION IN YBA2CU3O7-X [J].

JORGENSEN, JD ;

BENO, MA ;

HINKS, DG ;

SODERHOLM, L ;

VOLIN, KJ ;

HITTERMAN, RL ;

GRACE, JD ;

SCHULLER, IK ;

SEGRE, CU ;

ZHANG, K ;

KLEEFISCH, MS .

PHYSICAL REVIEW B, 1987, 36 (07) :3608-3616

[7] SUPERCONDUCTING YBA2CU3O7-DELTA THIN-FILMS ON GAAS WITH CONDUCTING INDIUM-TIN-OXIDE BUFFER LAYERS [J].

KELLETT, BJ ;

GAUZZI, A ;

JAMES, JH ;

DWIR, B ;

PAVUNA, D ;

REINHART, FK .

APPLIED PHYSICS LETTERS, 1990, 57 (24) :2588-2590

[8] A-AXIS ORIENTED YBA2CU3O7-X THIN-FILMS ON SI WITH CEO2 BUFFER LAYERS [J].

LUO, L ;

WU, XD ;

DYE, RC ;

MUENCHAUSEN, RE ;

FOLTYN, SR ;

COULTER, Y ;

MAGGIORE, CJ ;

INOUE, T .

APPLIED PHYSICS LETTERS, 1991, 59 (16) :2043-2045

[9] EPITAXIAL Y-BA-CU-O FILMS ON SI WITH INTERMEDIATE LAYER BY RF MAGNETRON SPUTTERING [J].

MIURA, S ;

YOSHITAKE, T ;

MATSUBARA, S ;

MIYASAKA, Y ;

SHOHATA, N ;

SATOH, T .

APPLIED PHYSICS LETTERS, 1988, 53 (20) :1967-1969

[10] LOW-TEMPERATURE DEPOSITION OF Y-BA-CU-O FILMS ON A CAF2 GAAS SUBSTRATE [J].

MIZUNO, K ;

MIYAUCHI, M ;

SETSUNE, K ;

WASA, K .

APPLIED PHYSICS LETTERS, 1989, 54 (04) :383-385