RATE EQUATION APPROACH FOR DIODE LASERS .2. STEADY-STATE SOLUTIONS FOR COMPOUND SYSTEMS

被引:4
作者
SALATHE, R [1 ]
VOUMARD, C [1 ]
WEBER, H [1 ]
机构
[1] UNIV BERN,INST APPL PHYS,BERN,SWITZERLAND
来源
OPTO-ELECTRONICS | 1974年 / 6卷 / 06期
关键词
D O I
10.1007/BF01418319
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:457 / 463
页数:7
相关论文
共 14 条
[1]  
Adams M. J., 1973, Opto-Electronics, V5, P201, DOI 10.1007/BF01414739
[2]  
AKERMAN D, 1971, SOVIET J QUANTUM ELE, V1, P60
[3]   DYNAMICS OF INJECTION LASERS [J].
BASOV, NG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (11) :855-+
[4]  
BROOM RF, 1970, IEEE J QUANT ELECTRO, VQE 6, P328
[5]   ANALYSIS OF A PROPOSED BISTABLE INJECTION LASER [J].
LASHER, GJ .
SOLID-STATE ELECTRONICS, 1964, 7 (10) :707-716
[6]   TUNABLE GAAS LASER IN AN EXTERNAL DISPERSIVE CAVITY [J].
LUDEKE, R ;
HARRIS, EP .
APPLIED PHYSICS LETTERS, 1972, 20 (12) :499-&
[7]  
MOHN E, 1968, 2 P INT S GALL ARS D
[8]  
NATHAN MI, 1964, J APPL PHYS, V36, P473
[9]  
PAOLI TL, 1970, IEEE J QUANT ELECTRO, VQE 6, P335
[10]   HIGH-POWER NARROW-LINEWIDTH OPERATION OF GAAS DIODE LASERS [J].
ROSSI, JA ;
CHINN, SR ;
HECKSCHER, H .
APPLIED PHYSICS LETTERS, 1973, 23 (01) :25-27