HIGH-RATE AMPLITUDE AND FREQUENCY-MODULATION OF SEMICONDUCTOR-LASERS

被引：8

作者：

SEEDS, AJ ^{[1
]}

FORREST, JR ^{[1
]}

机构：

[1] UNIV LONDON UNIV COLL,DEPT ELECTR & ELECT ENGN,MICROWAVE RES UNIT,LONDON WC1E 7JE,ENGLAND

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1982年 / 129卷 / 06期

关键词：

D O I：

10.1049/ip-i-1.1982.0058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：275 / 282

页数：8

共 43 条

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[5] DIRECT MODULATION OF DOUBLE-HETEROSTRUCTURE LASERS AT RATES UP TO 1 GBIT-S
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[7] ANALYSIS OF THE OPTICALLY CONTROLLED IMPATT (OPCAD) OSCILLATOR
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[J]. IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1979, 3 (05): : 161 - 169
[8] FORREST JR, 1978, INT ELECTRON DEVICES, P282
[9] TIME-DEPENDENT THERMAL EFFECTS IN CURRENT-MODULATED SEMICONDUCTOR-LASERS
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WELLER, JF
[J]. ELECTRONICS LETTERS, 1981, 17 (14) : 497 - 499
[10] RESONANCE-LIKE CHARACTERISTICS OF DIRECT MODULATION OF A JUNCTION LASER
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01): : 122 - &