ULTRASONIC-ATTENUATION IN N-TYPE GE .3. EFFECTS OF MAGNETIC-FIELD

被引：6

作者：

SAKURAI, H ^{[1
]}

MIYASATO, T ^{[1
]}

SUZUKI, K ^{[1
]}

机构：

[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1984年 / 53卷 / 04期

关键词：

D O I：

10.1143/JPSJ.53.1356

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1356 / 1359

页数：4

共 10 条

[1]

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[6] ULTRASONIC-ATTENUATION IN N-TYPE GE .1. IMPURITY CONCENTRATION-DEPENDENCE [J].

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[7] ULTRASONIC-ATTENUATION IN N-TYPE GE .2. EFFECTS OF UNIAXIAL-STRESS [J].

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[8]

SUZUKI K, 1970, J PHYS SOC JPN, V28, P1248

[9] TEMPERATURE-DEPENDENT CONDUCTIVITY OF METALLIC DOPED SEMICONDUCTORS [J].

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[10] EFFECTS OF MAGNETIC FIELD ON INTERMEDIATE IMPURITY CONDUCTION IN N-TYPE GERMANIUM [J].

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