TEMPERATURE-DEPENDENT CONDUCTIVITY OF METALLIC DOPED SEMICONDUCTORS

被引:111
作者
THOMAS, GA
KAWABATA, A
OOTUKA, Y
KATSUMOTO, S
KOBAYASHI, S
SASAKI, W
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
来源
PHYSICAL REVIEW B | 1982年 / 26卷 / 04期
关键词
D O I
10.1103/PhysRevB.26.2113
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2113 / 2119
页数:7
相关论文
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