TEMPERATURE-DEPENDENT CONDUCTIVITY OF METALLIC DOPED SEMICONDUCTORS

被引：111

作者：

THOMAS, GA

KAWABATA, A

OOTUKA, Y

KATSUMOTO, S

KOBAYASHI, S

SASAKI, W

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.26.2113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2113 / 2119

页数：7

共 41 条

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