LOW-TEMPERATURE TRANSPORT IN THE HOPPING REGIME - EVIDENCE FOR CORRELATIONS DUE TO EXCHANGE

被引：54

作者：

DAI, PH

ZHANG, YZ

SARACHIK, MP

机构：

[1] Physics Department, City College, City University of New York, New York

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.69.1804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Activated conduction, rho = rho-0 exp[(T0"/T)x], with x equal to or close to 1 is observed for insulating Si:B at low temperatures, indicating the presence of a "hard" gap in the density of states. A magnetic field suppresses this unexpectedly strong temperature dependence, changing it to the variable-range-hopping form rho(H) = rho-0(H) exp{[T0'(H)/T]1/2} expected for a "soft" parabolic Coulomb gap. This suggests that the density of states is determined by electron correlations due to spin as well as charge.

引用

页码：1804 / 1806

页数：3

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